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BFG520; BFG520/X; BFG520/XR
NPN 9 GHz wideband transistor
Rev. 04 -- 23 November 2007 Product data sheet
IMPORTANT NOTICE
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NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. The transistors are encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes. PINNING PIN 1 2 3 4 1 2 3 4 1 2 3 4
BFG520; BFG520/X; BFG520/XR
DESCRIPTION collector base emitter emitter
fpage
4
3
BFG520 (Fig.1) Code: %MF
1 Top view 2
MSB014
BFG520/X (Fig.1) Code: %ML collector emitter base emitter collector emitter base emitter
Fig.1 SOT143B.
handbook, 2 columns 3
4
BFG520/XR (Fig.2) Code: %MP
2 Top view 1
MSB035
Fig.2 SOT143R.
QUICK REFERENCE DATA SYMBOL VCBO VCEO Ic Ptot hFE Cre fT GUM PARAMETER collector-base voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 88 C; note 1 IC = 20 mA; VCE = 6 V; Tj = 25 C IC = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C S212 F insertion power gain noise figure IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt ; Ic = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt ; IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt ; IC = 5 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C collector-emitter voltage open base CONDITIONS open emitter - - - - 60 - - - - 17 - - - MIN. - - - - 120 0.3 9 19 13 18 1.1 1.6 1.9 TYP. MAX. 20 15 70 300 250 - - - - - 1.6 2.1 - pF GHz dB dB dB dB dB dB UNIT V V mA mW
Rev. 04 - 23 November 2007
2 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature
BFG520; BFG520/X; BFG520/XR
CONDITIONS open emitter open base open collector up to Ts = 88 C; note 1 - - - - -
MIN.
MAX. 20 15 2.5 70 300 150 175 V V V
UNIT
mA mW C C
-65 -
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 88 C; note 1 THERMAL RESISTANCE 290 K/W
Rev. 04 - 23 November 2007
3 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Ce Cc Cre fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1)
BFG520; BFG520/X; BFG520/XR
CONDITIONS IE = 0; VCB = 6 V IC = 20 mA; VCE = 6 V IC = ic = 0; VEB = 0.5 V; f = 1 MHz IE = ie = 0; VCB = 6 V; f = 1 MHz IC = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C
MIN. - 60 - - - - - - 17 - - - - - - - -
TYP. 120 1 0.6 0.3 9 19 13 18 1.1 1.6 1.9 17 26 275 -50
MAX. 50 250 - - - - - - - 1.6 2.1 - - - - -
UNIT nA pF pF pF GHz dB dB dB dB dB dB dBm dBm mV dB
S212 F
insertion power gain noise figure
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C
PL1 ITO Vo d2 Notes
output power at 1 dB gain compression third order intercept point output voltage second order intermodulation distortion
IC = 20 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 C note 2 note 3 IC = 20 mA; VCE = 6 V; Vo = 75 mV; Tamb = 25 C; f(p+q) = 810 MHz
1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 G UM = 10 log ------------------------------------------------------------- dB. 2 2 1 - S 11 1 - S 22 2. IC = 20 mA; VCE = 6 V; RL = 50 ; f = 900 MHz; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at f(2p-q) = 898 MHz and f(2q-p) = 904 MHz. 3. dim = -60 dB (DIN 45004B); Vp = Vo; Vq = Vo -6 dB; Vr = Vo -6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz
Rev. 04 - 23 November 2007
4 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
handbook, halfpage
400
MRA670-1
handbook, halfpage
250
MRA671
Ptot (mW) 300
hFE 200
150 200 100 100 50
0 0 50 100 150 Ts (oC) 200
0 10-2
10-1
1
10
IC (mA)
102
VCE = 6 V; Tj = 25 C.
Fig.3 Power derating curve.
Fig.4
DC current gain as a function of collector current.
handbook, halfpage
0.6
MRA672
handbook, halfpage
12
MRA673
Cre (pF) 0.4
fT (GHz) 8
VCE = 6 V
VCE = 3 V
0.2
4
0 0 4 8 VCB (V) 12
0 10-1
1
10
IC (mA)
102
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 C.
Fig.5
Feedback capacitance as a function of collector-base voltage.
Fig.6
Transition frequency as a function of collector current.
Rev. 04 - 23 November 2007
5 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
In Figs 7 to 10, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain.
BFG520; BFG520/X; BFG520/XR
handbook, halfpage
25
MRA674
handbook, halfpage
25
MRA675
gain (dB) 20
Gmax MSG GUM
gain (dB) 20
15 15
MSG
10
Gmax GUM
10
5 5
0 0 0 10 20 IC (mA) 30 VCE = 6 V; f = 2 GHz; Tamb = 25 C. VCE = 6 V; f = 900 MHz; Tamb = 25 C. 0 10 20 IC (mA) 30
Fig.7 Gain as a function of collector current.
Fig.8 Gain as a function of collector current.
MRA676
MRA677
handbook, halfpage
50
handbook, halfpage
50
gain (dB) 40
GUM
gain (dB) 40 GUM
MSG 30 30 MSG
20 Gmax
20 Gmax 10
10
0 10
102
103
f (MHz)
104
0 10
102
103
f (MHz)
104
IC = 5 mA; VCE = 6 V; Tamb = 25 C.
IC = 20 mA; VCE = 6 V; Tamb = 25 C.
Fig.9 Gain as a function of frequency.
Fig.10 Gain as a function of frequency.
Rev. 04 - 23 November 2007
6 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
handbook, halfpage
-20 dim
MEA975
handbook, halfpage
-20 d2
MEA974
(dB) -30
(dB) -30
-40
-40
-50
-50
-60
-60
-70
0
10
20
30
40
50 IC (mA)
-70
0
10
20
30
40
50 IC (mA)
Fig.11 Intermodulation distortion as a function of collector current.
Fig.12 Second order intermodulation distortion as a function of collector current.
handbook, halfpage
5
MRA682
Fmin (dB) 4 Gass
f = 900 MHz 1000 MHz
20 Gass (dB) 15
handbook, halfpage
5
MRA683
Fmin (dB) 4
IC = 5 mA
20 mA Gass
20 Gass (dB) 15
2000 MHz 3 2000 MHz 2 1000 MHz 1 900 MHz 500 MHz 0 1 10 IC (mA) -5 102 0 102 103 -5 104 Fmin 0 1 5 2 20 mA 5 mA Fmin 5 10 3 10
0
f (MHz)
V CE = 6 V; Tamb = 25 C.
VCE = 6 V; Tamb = 25 C.
Fig.13 Minimum noise figure and associated available gain as functions of collector current.
Fig.14 Minimum noise figure and associated available gain as functions of frequency.
Rev. 04 - 23 November 2007
7 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
handbook, full pagewidth
stability circle
90 1.0 1
135 pot. unst. region
0.5
2
45
0.8 0.6
0.2
Fmin = 1. 1 dB OPT
5
0.4 0.2
180
0
0.2
0.5
1 F = 1.5 dB F = 2 dB
2
5
0
0
0.2 F = 3 dB
5
-135
0.5 1
2
-45
MRA684
1.0
-90 IC = 5 mA; VCE = 6 V; f = 900 MHz; Zo = 50 .
Fig.15 Noise circle figure.
handbook, full pagewidth
90 1.0 1 135 0.5 F = 3 dB F = 2.5 dB 0.2 Gmax = 13 dB 180 0 MS 0.2 G = 12 dB 0.2 G = 11 dB G = 10 dB 5 F = 2 dB OPT Fmin = 1. 9 dB 0.5 1 2 5 0 5 2 45 0.8 0.6 0.4 0.2 0
-135
0.5 1
2
-45
MRA685
1.0
-90 IC = 5 mA; VCE = 6 V; f = 2 GHz; Zo = 50 .
Fig.16 Noise circle figure.
Rev. 04 - 23 November 2007
8 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 3 GHz 0.2 5 0.4 0.2 180 0 0.2 0.5 1 2 5 40 MHz 0.2 5 0 0
-135
0.5 1
2
-45
MRA678
1.0
-90 IC = 20 mA; VCE = 6 V. Zo = 50 .
Fig.17 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90
135
45
40 MHz
180 50 40 30 20 10
3 GHz
0
-135
-45
-90 IC = 20 mA; VCE = 6 V.
MRA679
Fig.18 Common emitter forward transmission coefficient (S21).
Rev. 04 - 23 November 2007
9 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
handbook, full pagewidth
90
135
45
3 GHz
180 0.25
40 MHz
0.20 0.15 0.10 0.05
0
-135
-45
-90 IC = 20 mA; VCE = 6 V.
MRA680
Fig.19 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 0 0
0.2
5
40 MHz
0.2
3 GHz
5
-135
0.5 1
2
-45
MRA681
1.0
-90 IC = 20 mA; VCE = 6 V. Zo = 50 .
Fig.20 Common emitter output reflection coefficient (S22).
Rev. 04 - 23 November 2007
10 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
PACKAGE OUTLINES Plastic surface mounted package; 4 leads
BFG520; BFG520/X; BFG520/XR
SOT143B
D
B
E
A
X
y vMA HE
e bp wM B
4
3
Q
A
A1 c
1
b1 e1
2
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
Rev. 04 - 23 November 2007
11 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
D
B
E
A
X
y vMA HE
e bp wM B
3
4
Q
A
A1 c
2
b1 e1
1
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.55 0.25 Q 0.45 0.25 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143R
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-03-10
Rev. 04 - 23 November 2007
12 of 14
NXP Semiconductors
BFG520; BFG520/X; BFG520/XR
NPN 9 GHz wideband transistor
Legal information
Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 04 - 23 November 2007
13 of 14
NXP Semiconductors
BFG520; BFG520/X; BFG520/XR
NPN 9 GHz wideband transistor
Revision history
Revision history Document ID BFG520XR_N_4 Modifications: BFG520XR_CNV_3 BFG520XR_2 BFG520XR_1 Release date 20071123 Data sheet status Product data sheet Product specification Product specification Change notice Supersedes BFG520XR_CNV_3 BFG520XR_2 BFG520XR_1 -
*
Pinning table on page 2; changed code
19950901
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 23 November 2007 Document identifier: BFG520XR_N_4

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